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   Home > People > Hofmann
Dr. Tino Hofmann
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Scientific Activities
2005:
University Leipzig
Free-charge-carrier effective mass in ZnMnSe and InN
Landau level transitions in graphite
2003-2004:
University Leipzig
Free-charge-carrier properties in quaternary group-III group-V alloys (BInGaAs, AlGaInP) and multi quantum well structures inverstiagted using MOGE
since 2003:
University Leipzig
First MOGE - measurements with the Far-Infrared Ellipsometer and the Oxford cryostat
08 - 12 2002:
University Leipzig
Completion and first measurements with the Far-Infrared Ellipsometer at the University of Leipzig
06 - 07 2002:
University Lincoln-NE
(Prof. J.A.Woollam)
First measurements of free-carrier properties in highly disordered Al0.52In0.48P:Te structures using Magnetooptic Generalized Ellipsometry (MOGE)
05 2002:
University Leipzig
Construction of a Far-Infrared Ellipsometer based on the prototype at the University of Lincoln-NE
07 - 09 2001:
University Lincoln-NE
(Prof. J.A.Woollam)
First measurements of free-carrier properties in GaAs:Te/GaAs structures using Magnetooptic Generalized Ellipsometry (MOGE); Infrared anisotropy and phonon modes of highly ordered Al0.52In0.48P studied by Far-Infrared Ellipsometry
06 2001:
University Leipzig
Phonon modes of highly ordered Ga0.52In0.48P studied with Raman scattering experiments
03 - 05 2001:
University Lincoln-NE
(Prof. J.A.Woollam)
Infrared anisotropy and phonon modes of highly ordered Ga0.52In0.48P studied by Far-Infrared Ellipsometry
1999 - 2000:
University Leipzig
Far-Infrared Ellipsometry studies of surface guided waves and interface TM waves in GaAs:Te/GaAs structures;
Far-Infrared Ellipsometry and Raman scattering studies on InAs monolayers in GaAs and on highly disordered (AlxGa1-x)0.52In0.48P
04 - 05 1999:
University Lincoln-NE
(Prof. J.A.Woollam)
Far-Infrared Ellipsometry investigations on InAs monolayers in GaAs;
Attenuated Total Reflection (ATR) Ellipsometry experiments on InAs/GaAs ML structures
1998 - 1999:
University Leipzig
Optical properties of spontaneous ordering in AlGaInP studied by Reflection-Dark Field Spectroscopy (R-DFS)

back to People last update 9. June 2014